BFP740F nov-19-2004 1 npn silicon germanium rf transistor* ? high gain ultra low noise rf transistor ? provides outstanding performance for a wide rang e of wireless applications up to 10 ghz ? ideal for cdma and wlan applications ? outstanding noise figure f = 0.5 db at 1.8 ghz outstanding noise figure f = 0.75 db at 6 ghz ? high maximum stable gain g ms = 27.5 db at 1.8 ghz ? gold metallization for extra high reliability ? 150 ghz f t -silicon germanium technology * short-term description tsfp-4 1 2 4 3 xys 1 3 4 2 direction of unreeling top view xys esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package BFP740F r7s 1=b 2=e 3=c 4=e - - tsfp-4 maximum ratings parameter symbol value unit collector-emitter voltage t a > 0c t a 0c v ceo 4 3.5 v collector-emitter voltage v ces 13 collector-base voltage v cbo 13 emitter-base voltage v ebo 1.2 collector current i c 30 ma base current i b 3 total power dissipation 1) t s 90c p tot 160 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 1 t s is measured on the collector lead at the soldering point to the pcb
BFP740F nov-19-2004 2 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs 370 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 4 4.7 - v collector-emitter cutoff current v ce = 13 v, v be = 0 i ces - - 30 a collector-base cutoff current v cb = 5 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 0.5 v, i c = 0 i ebo - - 3 a dc current gain i c = 25 ma, v ce = 3 v h fe 160 250 400 - 1 for calculation of r thja please refer to application note thermal resistance
BFP740F nov-19-2004 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 25 ma, v ce = 3 v, f = 1 ghz f t - 42 - ghz collector-base capacitance v cb = 3 v, f = 1 mhz c cb - 0.08 - pf collector emitter capacitance v ce = 3 v, f = 1 mhz c ce - 0.25 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 0.45 - noise figure i c = 8 ma, v ce = 3 v, f = 1.8 ghz, z s = z sopt i c = 8 ma, v ce = 3 v, f = 6 ghz, z s = z sopt f - - 0.5 0.75 - - db power gain, maximum stable 1) i c = 25 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ms - 27.5 - db power gain, maximum available 1) i c = 25 ma, v ce = 3 v, z s = z sopt , z l = z lopt , f = 6 ghz g ma - 19 - db transducer gain i c = 25 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz i c = 25 ma, v ce = 3 v, z s = z l = 50 ? , f = 6 ghz | s 21e | 2 - - 25 14.5 - - db third order intercept point at output 2) v ce = 3 v, i c = 25 ma, f = 1.8 ghz, z s = z l = 50 ? ip 3 - 26 - dbm 1db compression point at output i c = 25 ma, v ce = 3 v, z s = z l = 50 ? , f = 1.8 ghz p -1db - 12 - 1 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 ), g ms = | s 21e / s 12e | 2 ip3 value depends on termination of all intermodulation frequency components. termination used for this measurement is 50 ? from 0.1 mhz to 6 ghz
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